Low temperature annealing of electron irradiated germanium

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Abstract
N-type germanium (4 × 1014Sb/cm3) has been irradiated with 1.1 MeV electrons at 5°K. The defects produced have been studied by measuring the voltage-dependent capacitance of a metal-germanium junction at the surface of a germanium sample. These measurements were made at 10°K and directly gave the fixed charge density near the surface of the sample. The production and recovery of defects seen near the surface is the same as seen in bulk experiments. A 0.5 MeV electron beam was used to cause radiation annealing of the defects at 5°K. The fraction recovered during radiation annealing is directly proportional to √t. A model based on diffusion-limited recovery theory is used to explain these results. This model is also used to discuss the results of previous experiments. The temperature dependence of the observed recovery at 5°K gave a defect migration energy of 0.0044±0.0008 eV.