Determination of band-gap parameters of Hg1−xCdxTe based on high-temperature carrier concentration
- 1 April 1983
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (4) , 1883-1886
- https://doi.org/10.1063/1.332241
Abstract
The temperature dependence of the carrier concentration of Hg1−xCdx Te at elevated temperatures is used to determine its band parameters near the bandedge. The electron concentration is calculated by using the Kane model (k⋅p method), and is fit to observed values derived from measurements of the Hall coefficient in the near‐intrinsic region. This procedure results in expressions for the following parameters: the band‐gap Eg and its dependence on temperature and composition; Kane’s interband‐coupling matrix element and the heavy‐hole effective mass ratio. Modified values of the intrinsic carrier concentration are calculated using these parameters.This publication has 16 references indexed in Scilit:
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