Relaxed SiGe-on-insulator substrates without thick SiGe buffer layers
- 28 January 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (4) , 601-603
- https://doi.org/10.1063/1.1435799
Abstract
We have developed a technology for relaxing top SiGe layers with low dislocation density on Si substrates, without using thick SiGe buffer structures. By introducing a thin strained SiGe layer and the internal-oxidation (ITOX) process following the separation-by-implanted-oxygen (SIMOX) process, we have experimentally demonstrated relaxed SiGe-on-insulator (SGOI) substrates with the Ge content of 20%, and it has been realized that their dislocation density is a factor of 20 lower than that of SGOI with SiGe buffer layer.Keywords
This publication has 7 references indexed in Scilit:
- A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETsJapanese Journal of Applied Physics, 2001
- Formation of SiGe on Insulator Structure and Approach to Obtain Highly Strained Si Layer for MOSFETsJapanese Journal of Applied Physics, 2001
- Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technologyIEEE Electron Device Letters, 2000
- Investigations on High‐Temperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX WafersJournal of the Electrochemical Society, 1996
- Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistorsIEEE Electron Device Letters, 1994
- Measurement of stress and relaxation in Si1−xGex layers by Raman line shift and x-ray diffractionJournal of Applied Physics, 1993
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985