D- state in silicon
- 31 October 1976
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 20 (2) , 131-133
- https://doi.org/10.1016/0038-1098(76)90469-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Uniaxial Stress Effect on the Electron Affinity of theState in GermaniumPhysical Review Letters, 1976
- Photoconductivity from shallow negative donor ions in silicon: A new far-infrared detectorJournal of Applied Physics, 1976
- Very Shallow Trapping State in Doped GermaniumPhysical Review Letters, 1975
- New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and GermaniumPhysical Review B, 1967
- Ground State Energy of Two-Electron AtomsPhysical Review B, 1956
- On the Continuous Absorption Coefficient of the Negative Hydrogen Ion. II.The Astrophysical Journal, 1945