Zero-bias 40Gbit/s germanium waveguide photodetector on silicon
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- 4 January 2012
- journal article
- research article
- Published by Optica Publishing Group in Optics Express
- Vol. 20 (2) , 1096-1101
- https://doi.org/10.1364/oe.20.001096
Abstract
We report on lateral pin germanium photodetectors selectively grown at the end of silicon waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge photodetectors using three kinds of experimental set-ups. In addition, a responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were demonstrated under zero-bias at a wavelength of 1.55 µm.Keywords
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