Abstract
A Monte Carlo simulation of transient currents in thin layers with a macroscopically nonhomogeneous spatial trap distribution (STD) has been performed. Multiple-trapping band transport of electrical carriers for exponentially distributed depths of traps has been investigated for several STDs: the exponential distribution given by Nt(x)=N0 exp(-x/D) exp(-E/kTc), Nt(x)=N0 exp(-(Lx)/D) exp(-E/kTc), Nt(x)=N0(exp(-x/D1)+exp(-(L-x)/D2))exp(-E/kTc) and a Gaussian distribution with maximum trap density in the middle of the layer thickness L given by Nt(x)=N0 exp(-(x-L/2)2/D2) exp(-E/kTc). Remarkable deviations from homogeneous-trap-density characteristics have been found. Some peculiarities of transient currents resulting from trap nonhomogeneity have been pointed out. Energy and spatial distributions of the trapped carriers for chosen times have also been calculated.