Defect formation in thermal SiO2 by high-temperature annealing
- 1 December 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (22) , 1525-1527
- https://doi.org/10.1063/1.97322
Abstract
The formation of voids (or holelike defects) in 500‐Å‐thick thermal oxide films on Si(100) due to thermal decomposition of SiO2 during vacuum annealing at high temperatures (>1050 °C) has been studied as a function of temperature and time. The defect size distribution is sharply peaked and the density of the defects is essentially independent of annealing time. These observations suggest strongly that the void formation process is initiated at defect sites which are already present after oxidation. The kinetics of oxide void growth suggest the presence of a nucleation stage of the reaction prior to void growth.Keywords
This publication has 9 references indexed in Scilit:
- High-Temperature SiDecomposition at the Si/Si InterfacePhysical Review Letters, 1985
- High temperature annealing behavior of electron traps in thermal SiO2Solid-State Electronics, 1984
- Electrical Properties of Post‐annealed Thin SiO2 FilmsJournal of the Electrochemical Society, 1983
- Annealing of surface states in polycrystalline-silicon–gate capacitorsJournal of Applied Physics, 1977
- Electronic states at the silicon-silicon dioxide interfaceProgress in Surface Science, 1977
- The high-temperature oxidation, reduction, and volatilization reactions of silicon and silicon carbideOxidation of Metals, 1972
- High-Temperature Annealing of Oxidized Silicon SurfacesJournal of the Electrochemical Society, 1971
- Si-SiO[sub 2] Fast Interface State MeasurementsJournal of the Electrochemical Society, 1968
- Low Voltage Electron Diffraction Study of the Oxidation and Reduction of SiliconJournal of Applied Physics, 1962