Structural analysis of NiO ultra-thin films epitaxially grown on ultra-smooth sapphire substrates by synchrotron X-ray diffraction measurements
- 1 January 2004
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 221 (1-4) , 450-454
- https://doi.org/10.1016/s0169-4332(03)00961-9
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Enhanced hole injections in organic light-emitting devices by depositing nickel oxide on indium tin oxide anodeApplied Physics Letters, 2002
- The influences of preparation parameters on NiO thin film properties for gas-sensing applicationSensors and Actuators B: Chemical, 2001
- High performance p-type thermoelectric oxide based on NiOMaterials Letters, 2000
- Atomic-scale formation of ultrasmooth surfaces on sapphire substrates for high-quality thin-film fabricationApplied Physics Letters, 1995
- Double SOI Structures and Device Applications with Heteroepitaxial Al2O3 and SiJapanese Journal of Applied Physics, 1995
- Preparation and Electrochromic Properties of RF-Sputtered NiOx Films Prepared in Ar/O2/H2 AtmosphereJapanese Journal of Applied Physics, 1994
- CoO-NiO superlattices: Interlayer interactions and exchange anisotropy with Ni81Fe19 (invited)Journal of Applied Physics, 1993
- High-power InGaN/GaN double-heterostructure violet light emitting diodesApplied Physics Letters, 1993
- Photoemission on NiOZeitschrift für Physik B Condensed Matter, 1991
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989