Ultraviolet laser ablation and etching of polymethyl methacrylate sensitized with an organic dopant
- 1 April 1988
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 45 (4) , 289-292
- https://doi.org/10.1007/bf00617933
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Ablation and etching of polymethylmethacrylate by very short (160 fs) ultraviolet (308 nm) laser pulsesApplied Physics Letters, 1987
- Wavelength dependence of the excimer laser etching characteristics of a polymeric resistApplied Physics Letters, 1987
- Dopant-induced ablation of poly(methyl methacrylate) by a 308-nm excimer laserMacromolecules, 1987
- Dynamics of UV laser ablation of organic polymer surfacesJournal of Applied Physics, 1986
- Excimer laser etching of polymersJournal of Applied Physics, 1986
- Mechanism of the ultraviolet laser ablation of polymethyl methacrylate at 193 and 248 nm: laser-induced fluorescence analysis, chemical analysis, and doping studiesJournal of the Optical Society of America B, 1986
- Photochemical cleavage of a polymeric solid: details of the ultraviolet laser ablation of poly(methyl methacrylate) at 193 nm and 248 nmMacromolecules, 1986
- Ablative photodecomposition of polymer films by pulsed far‐ultraviolet (193 nm) laser radiation: Dependence of etch depth on experimental conditionsJournal of Polymer Science: Polymer Chemistry Edition, 1984
- Some aspects of the light protection of polymersPublished by Walter de Gruyter GmbH ,1972