Crystal growth and liquid-phase epitaxy of gallium nitride
- 1 April 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 211 (1-4) , 62-67
- https://doi.org/10.1016/s0022-0248(99)00831-3
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Film orientation, growth parameters and growth modes in epitaxy of YBa2Cu3OxJournal of Crystal Growth, 1999
- InGaN-BASED LASER DIODESAnnual Review of Materials Science, 1998
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hoursApplied Physics Letters, 1997
- LiGaO 2 Single Crystals for a Substrate of Hexagonal GaN Thin FilmsJapanese Journal of Applied Physics, 1997
- Growth of Bulk AlN and GaN Single Crystals by SublimationMRS Proceedings, 1996
- 2.2 eV Luminescence in GaNMRS Proceedings, 1995
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Heteroepitaxial Thermal Gradient Solution Growth of GaNJournal of the Electrochemical Society, 1972
- On the relations between structure and morphology of crystals. IActa Crystallographica, 1955