Energy Relaxation Effect of Hot Electrons in GaAs
- 1 August 1974
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 37 (2) , 408-414
- https://doi.org/10.1143/jpsj.37.408
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- High frequency behaviour of electron transfer in InP and GaAs from a dynamical Monte Carlo studyJournal of Physics C: Solid State Physics, 1972
- Microwave Measurement of the Velocity-Field Characteristics in n-Type Gallium ArsenideJapanese Journal of Applied Physics, 1971
- ERROR IN MICROWAVE MEASUREMENTS OF THE VELOCITY-FIELD CHARACTERISTIC OF n-TYPE GaAs DUE TO ENERGY RELAXATION EFFECTSApplied Physics Letters, 1971
- Harmonic mixing and energy relaxation of warm electrons in n-GaAs at low temperaturesJournal of Physics and Chemistry of Solids, 1971
- Temperature Dependence of the Transport Properties of Gallium Arsenide Determined by a Monte Carlo MethodJournal of Applied Physics, 1970
- Microwave measurement of the velocity-field characteristic of GaAsIEEE Transactions on Electron Devices, 1970
- Time Response of the High-field Electron Distribution Function in GaAsIBM Journal of Research and Development, 1969
- Energy relaxation time of hot electrons in GaAsPhysics Letters A, 1968
- High-Field Transport in- Type GaAsPhysical Review B, 1968
- The intervalley transfer mechanism of negative resistivity in bulk semiconductorsProceedings of the Physical Society, 1965