Growth and characterization of lead-tin telluride epitaxial layers
- 16 May 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 5 (2) , 439-448
- https://doi.org/10.1002/pssa.2210050218
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- SPONTANEOUS AND LASER EMISSION FROM Pb1−xSnxTe DIODES PREPARED BY Sb DIFFUSIONApplied Physics Letters, 1970
- Lead-tin telluride phetovoltaic detectors for the 8–14μm atmospheric windowInfrared Physics, 1970
- Preparation and properties of lead-tin telluride photodiodesSolid-State Electronics, 1970
- Growth and Characterization of Lead Telluride Epitaxial LayersJournal of the Electrochemical Society, 1970
- Phase Diagram of the Ternary System Pb–Sn–TeJournal of Applied Physics, 1969
- A Chemical Polish for Sn[sub x]Pb[sub 1−x]TeJournal of the Electrochemical Society, 1969
- Phase studies of the Pb1−xSnxTe alloysMaterials Research Bulletin, 1967
- Reproducible preparation of Sn1−xPbxTe epitaxial films with moderate carrier concentrationsMaterials Science and Engineering, 1966
- Band Structure and Laser Action inPhysical Review Letters, 1966
- A Chemical Polish for Lead TellurideJournal of the Electrochemical Society, 1965