Post-hydrogenated chemical vapor deposited amorphous silicon Schottky diodes
- 1 July 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (7) , 5044-5051
- https://doi.org/10.1063/1.331381
Abstract
Amorphous Si Schottky diodes are prepared by chemical vapor deposition and a post- hydrogenation treatment. Capacitance and photocurrent measurements on these diodes as a function of doping are discussed in terms of space-charge characteristics and carrier collection mechanisms. For doped samples a full analysis of the C(ω) and C(V) dependences enables us to obtain the space-charge width and the doping efficiency. A correlation between space-charge width and collection length of photogenerated carriers is obtained in these samples. For undoped diodes the photocurrent versus wavelength dependences are used to analyze the collection efficiency. A power efficiency of 2.5% is obtained for a fully depleted cell without antireflection coating under AMl solar simulator conditions.This publication has 21 references indexed in Scilit:
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