Kinetics and mechanism of amorphous hydrogenated silicon growth by homogeneous chemical vapor deposition
- 1 July 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (1) , 73-75
- https://doi.org/10.1063/1.92521
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Glow discharge preparation of amorphous hydrogenated silicon from higher silanesApplied Physics Letters, 1980
- Infrared Spectrum and Structure of Hydrogenated Amorphous SiliconPhysica Status Solidi (b), 1980
- Post-hydrogenation of CVD deposited a-Si filmsJournal of Non-Crystalline Solids, 1980
- Kinetics and mechanism of the silane decompositionInternational Journal of Chemical Kinetics, 1979
- The kinetics of the deposition of silicon by silane pyrolysis at low temperatures and atmospheric pressureThin Solid Films, 1979
- Substitutional doping of chemically vapor-deposited amorphous siliconJournal of Crystal Growth, 1978
- Hydrogen bonding in silicon-hydrogen alloysPhilosophical Magazine Part B, 1978
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- The Role of Homogeneous Reactions in Chemical Vapor DepositionJournal of the Electrochemical Society, 1971
- The pyrolysis of monosilaneProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1966