Reduced carbon acceptor incorporation in GaAs grown by molecular beam epitaxy using dimer arsenic
- 9 May 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (19) , 1596-1598
- https://doi.org/10.1063/1.99092
Abstract
Doubly doped (C,Be) GaAs layers grown by molecular beam epitaxy under dimer or tetramer arsenic flux are studied by selectively excited photoluminescence. Acceptor spectroscopy gives the first experimental evidence of the decrease of carbon shallow acceptor concentration when using dimer rather than tetramer arsenic.Keywords
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