Effect of doping profile on the lifetime of green phosphorescent organic light-emitting diodes
- 9 October 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (15)
- https://doi.org/10.1063/1.2360223
Abstract
The lifetime of green phosphorescent light-emitting diodes was improved by using a graded doping structure in light-emitting layer. A green device with high doping concentration at the hole transport layer and light-emitting layer interface showed longer lifetime than a conventional device with uniform doping concentration for the whole light-emitting layer by more than 60%.Keywords
This publication has 13 references indexed in Scilit:
- 17.3: Study of Light Emission Mechanism and Long Lifetime in Phosphorescent Organic Light Emitting Diodes Using Graded Doping StructureSID Symposium Digest of Technical Papers, 2006
- High-efficiency and low-voltage p-i-n electrophosphorescent organic light-emitting diodes with double-emission layersApplied Physics Letters, 2004
- High-Efficiency Organic Electrophosphorescent Diodes Using 1,3,5-Triazine Electron Transport MaterialsChemistry of Materials, 2004
- Current status of electrophosphorescent device stabilityOrganic Electronics, 2003
- New charge-carrier blocking materials for high efficiency OLEDsOrganic Electronics, 2003
- High-efficiency electrophosphorescent organic light-emitting diodes with double light-emitting layersApplied Physics Letters, 2002
- High operational stability of electrophosphorescent devicesApplied Physics Letters, 2002
- Highly efficient phosphorescence from organic light-emitting devices with an exciton-block layerApplied Physics Letters, 2001
- Doping effects in organic electroluminescent devicesJournal of Applied Physics, 1998
- Physical mechanisms in double-carrier trap-charge limited transport processes in organic electroluminescent devices: A numerical studyJournal of Applied Physics, 1998