Chemical beam epitaxy of GaAs films using single-source precursors

This publication has 5 references indexed in Scilit:

• Pyrolysis studies of the single-source gallium arsenide precursors [Me2Ga(.mu.-As-i-Pr2)]3, [Me2Ga(.mu.-AsMe2)]3, [Me2Ga(.mu.-As-t-Bu2)]2, and [Et2Ga(.mu.-As-t-Bu2)]2
  Chemistry of Materials, 1992
• Growth of epitaxial (100) gallium arsenide films using the single-source precursor [Me2Ga(.mu.-t-Bu2As)]2
  Chemistry of Materials, 1992
• Progress in chemical beam epitaxy
  Journal of Crystal Growth, 1990
• Chemisorption and decomposition of trimethylgallium on GaAs(100)
  Surface Science, 1990
• Mono-and di-nuclear phosphido and arsenido complexes of gallium; Ga(EBu^t₂)₃, Ga[PH(2,4,6-Bu^t₃C₆H₂)]₃and [Ga(µ-EBu^t₂)R₂]₂, (E = P, As; R = Me, Buⁿ)
  Journal of the Chemical Society, Chemical Communications, 1986