Negative conductance in semiconductors
- 1 January 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Spectrum
- Vol. 5 (1) , 47-56
- https://doi.org/10.1109/mspec.1968.5215632
Abstract
Until recently, investigators have been frustrated in their attempts at applying microwave and millimeter-wave frequencies to semiconductor devices. During the last few years, the discovery of avalanche transit-time and Gunn effects in bulk semiconductors has been met with overwhelming enthusiasm. The successful fabrication of models presently utilizing these negative-conductance phenomena has given these high-frequency devices an optimistic outlook for the future.Keywords
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