Note on Impurity Oxygen in Gallium Phosphide
- 1 July 1969
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 8 (7) , 886-889
- https://doi.org/10.1143/jjap.8.886
Abstract
Zn-doped GaP crystals were grown from the solutions either in carbon-coated quartz containers or in bare containers. These sorts of crystals showed markedly different characteristics in the photo- and electroluminescences, namely, the crystals obtained from the bare containers emitted a red light (675 mµ) and a weak green light (560 mµ), while the crystals from the carbon-coated containers emitted the green light only. It has been concluded from these results that most of oxygen, an impurity in GaP, is introduced from heated quartz container during the fabrication of crystals and re-confirmed that the oxygen correlates closely with the red emission although its more detailed behaviour is not made clear yet.Keywords
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