Sub-20 nm Short Channel Carbon Nanotube Transistors
- 17 November 2004
- journal article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 5 (1) , 147-150
- https://doi.org/10.1021/nl048312d
Abstract
Carbon nanotube field-effect transistors with sub-20 nm long channels and on/off current ratios of >10(6) are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 to 1.1 nm grown from structured catalytic islands using chemical vapor deposition at 700 degrees C form the channels. Electron beam lithography and a combination of HSQ, calix[6]arene, and PMMA e-beam resists were used to structure the short channels and source and drain regions. The nanotube transistors display on-currents in excess of 15 microA for drain-source biases of only 0.4 V.Keywords
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This publication has 6 references indexed in Scilit:
- Towards the integration of carbon nanotubes in microelectronicsDiamond and Related Materials, 2004
- High-Current Nanotube TransistorsNano Letters, 2004
- Ballistic carbon nanotube field-effect transistorsNature, 2003
- High-κ dielectrics for advanced carbon-nanotube transistors and logic gatesNature Materials, 2002
- Single-walled carbon nanotube electronicsIEEE Transactions on Nanotechnology, 2002
- Organic-functionalized molecular sieves as shape-selective catalystsNature, 1998