Sub 20 nm Short Channel Carbon Nanotube Transistors

Preprint

7 November 2004

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0411177

Abstract

Carbon nanotube field-effect transistors with sub 20 nm long channels and on/off current ratios of > 1000000 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 nm to 1.1 nm grown from structured catalytic islands using chemical vapor deposition at 700 degree Celsius form the channels. Electron beam lithography and a combination of HSQ, calix[6]arene and PMMA e-beam resists were used to structure the short channels and source and drain regions. The nanotube transistors display on-currents in excess of 15 microA for drain-source biases of only 0.4 Volt.

Keywords

TRANSISTORS CARBON NANOTUBE
FIELD EFFECT TRANSISTORS
NANOTUBE TRANSISTORS
CARBON NANOTUBES
CHANNEL CARBON
DRAIN SOURCE
ARENE

All Related Versions

Version 1, 2004-11-07, ArXiv
Published version: Nano Letters, 5 (1), 147.

This publication has 0 references indexed in Scilit: