Effect of Electron Traps on Residual Voltage in Chalcogenide Photoreceptors
- 1 September 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (9R) , 1293-1297
- https://doi.org/10.1143/jjap.21.1293
Abstract
The effect of electron traps on the residual voltage in chalcogenide photoreceptors is discussed. In order to cancel hole traps in these photoreceptors and to decrease the residual voltage, it is useful to introduce electron traps. It is seen from numerical calculation that, in the case of uniform distribution of the normalized electron trap density N tn, the introduction of N tn=1.0 decreases the the residual voltage to one tenth of N tn=0. On the other hand, in the case of exponential distribution of the normalized electron trap N tn(x)=N 0exp (-A x), it is interesting that the residual voltage V r is greatly influenced by the electron trap density at the interface of the substrate.Keywords
This publication has 3 references indexed in Scilit:
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- Electron and hole transport in amorphous As2Se3Philosophical Magazine Part B, 1978
- The increase in the conductivity of chalcogenide glasses by the addition of certain impuritiesPhilosophical Magazine, 1976