Lüders bands in heavily doped silicon single crystals
- 30 November 1973
- journal article
- Published by Elsevier in Acta Metallurgica
- Vol. 21 (11) , 1523-1531
- https://doi.org/10.1016/0001-6160(73)90182-x
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Etch pit studies of dislocation arrangements resulting from the deformation of single crystals of copper 7.5 at.% aluminium alloysPhilosophical Magazine, 1972
- A dislocation multiplication mechanism operating close to a surfacePhilosophical Magazine, 1972
- The Portevin-Le Chatelier effect in an Al-Mg-Si alloyActa Metallurgica, 1971
- The Effect of Charged Impurities on the Yield Point of SiliconPhysica Status Solidi (b), 1970
- Der beginn der plastischen verformung von hoch phosphordotiertem siliziumActa Metallurgica, 1969
- THE NATURE AND FORMATION OF BANDS OF DEFORMATION IN SINGLE CRYSTALS OF α-PHASE COPPER–ALUMINIUM ALLOYSCanadian Journal of Physics, 1967
- The microstructure of tensile kinks in cadmium crystalsPhysica Status Solidi (b), 1966
- Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium ArsenideJournal of Applied Physics, 1964
- Die Inhomogenität der Verformung von Germanium im StreckgrenzenbereichPhysica Status Solidi (b), 1964
- Solid Solubilities of Impurity Elements in Germanium and Silicon*Bell System Technical Journal, 1960