Plasma-Deposited Silicon Nitride Films from SiF2 as Silicon Source
- 1 May 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (5A) , L268
- https://doi.org/10.1143/jjap.23.l268
Abstract
SiF2 gas is used instead of SiF4 as a reactant source for the plasma-deposition of silicon nitride. As compared with the reaction from the SiF4–N2–H2 gas mixture, (i) the deposition rate is higher at the same N/Si ratio, (ii) more nitrogen, less fluorine and less oxygen are incorporated in the film, and (iii) the film can be deposited without H2 gas. These results can be attributed to higher reactivity of the SiF2 gas.Keywords
This publication has 2 references indexed in Scilit:
- Plasma-Enhanced Chemical Vapor Deposition of Fluorinated Silicon NitrideJapanese Journal of Applied Physics, 1984
- Properties of Plasma‐Deposited Silicon NitrideJournal of the Electrochemical Society, 1979