Plasma-Enhanced Chemical Vapor Deposition of Fluorinated Silicon Nitride
- 1 March 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (3A) , L144-146
- https://doi.org/10.1143/jjap.23.l144
Abstract
Fluorinated silicon nitride films are deposited by the plasma-reaction of SiF4–N2–H2 gas mixture. The fluorine content in the film is ∼25 at%. Although hydrogen is incorporated in the form of N–H bonds, the bondings remain stable up to 640°C. The films have relatively high resistivity (7×1016 Ωcm at 2 MV/cm), high breakdown strength (10 MV/cm), and low deep trap density.Keywords
This publication has 15 references indexed in Scilit:
- Composition and Chemical Bonds in Silicon Nitride by SiH4-N2 Gas Mixture Plasma CVDJapanese Journal of Applied Physics, 1983
- Characteristics of Pulsed Molecular Beams from an Electromagnetic ValveJapanese Journal of Applied Physics, 1983
- Electrical properties and their thermal stability for silicon nitride films prepared by plasma-enhanced depositionJournal of Applied Physics, 1982
- Deep Trap States in Si3N4 Layer on Si SubstrateJapanese Journal of Applied Physics, 1981
- Vibrational Excitations in-Si: F and-Si: (F,H) AlloysPhysical Review Letters, 1981
- Properties of Plasma‐Deposited Silicon NitrideJournal of the Electrochemical Society, 1979
- A new amorphous silicon-based alloy for electronic applicationsNature, 1978
- Reactive Plasma Deposited Si-N Films for MOS-LSI PassivationJournal of the Electrochemical Society, 1978
- Optical Absorption as a Control Test for Plasma Silicon Nitride DepositionJournal of the Electrochemical Society, 1978
- Hydrogen content and annealing of memory quality silicon-oxynitride filmsJournal of Electronic Materials, 1976