Hydrogen content and annealing of memory quality silicon-oxynitride films
- 1 April 1976
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 5 (2) , 161-177
- https://doi.org/10.1007/bf02652901
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Charge transfer properties of mnos structures as influenced by processing parametersJournal of Electronic Materials, 1975
- Stress Adjustment in Si3N4 Films by Ion ImplantationPublished by Springer Nature ,1975
- Effects of bulk trapping on the memory characteristics of thick-oxide MNOS variable-threshold capacitorsSolid-State Electronics, 1974
- The Detection of Silicon-Oxynitride Layers on the Surfaces of Silicon-Nitride Films by Auger Electron EmissionJournal of the Electrochemical Society, 1972
- Materials for Use in a Durable Selectively Semitransparent PhotomaskJournal of the Electrochemical Society, 1971
- Characteristics of Fast Surface States Associated with SiO[sub 2]-Si and Si[sub 3]N[sub 4]-SiO[sub 2]-Si StructuresJournal of the Electrochemical Society, 1969
- Properties of Si[sub x]O[sub y]N[sub z] Films on SiJournal of the Electrochemical Society, 1968