Effects of bulk trapping on the memory characteristics of thick-oxide MNOS variable-threshold capacitors
- 31 January 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (1) , 1-10
- https://doi.org/10.1016/0038-1101(74)90106-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Dielectric-Relaxation Currents in InsulatorsPhysical Review B, 1972
- READ-ONLY memory using MAS transistorsIEEE Journal of Solid-State Circuits, 1970
- Automatic measurement of charge storage in MNOS memory structuresJournal of Physics E: Scientific Instruments, 1970
- Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) StructuresJournal of Applied Physics, 1969