Ultra-high throughput of GaAs and (AlGa)As layers grown by MBE with a specially designed MBE system
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 317-321
- https://doi.org/10.1016/0022-0248(89)90409-0
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Ultra-High Throughput of GaAs and (AlGa)As Layers Grown by Molecular Beam Epitaxy (MBE) with a Specially Designed MBE SystemJapanese Journal of Applied Physics, 1988
- An automatic carrier concentration profile plotter using an electrochemical techniqueJournal of Applied Electrochemistry, 1975
- Dielectric Breakdown in Silicon Dioxide Films on SiliconJournal of the Electrochemical Society, 1972
- Electron Transport in GaAsPhysical Review B, 1971