The I-V characteristics of double-barrier resonant tunneling diodes: Observation and calculation on their temperature dependence and asymmetry

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Abstract
We report a calculation on the current-voltage characteristics of double-barrier resonant tunneling diodes. The results can well-explain experimental observations, in particular, the temperature dependence of both the absolute current amplitude and the resonant voltage positions. Our calculation takes into account the self-consistent Poisson equation, quantum mechanical tunneling, and band-gap offset at the heterojunctions. In addition, the calculation includes a realistic scattering-induced broadening effect, with which a quantitative fit throughout the entire negative differential resistance (NDR) region is demonstrated. Finally, we show that the differential resistance in the NDR region can be tuned, when asymmetrical tunneling barriers are used.