Polarization Characteristics of MOCVD Grown GaAs/GaAlAs CBH Surface Emitting Lasers

1 September 1988

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 27 (9R)
https://doi.org/10.1143/jjap.27.1774

Abstract

Systematic measurements have been done for the polarization of a vertical cavity surface emitting (SE) laser. The light outputs of the tested devices were linearly polarized and the direction was along the specified crystal orientation. The polarization selectivity is discussed.

Keywords

MOCVD GROWN
GAAS/GAALAS CBH
GROWN GAAS/GAALAS
POLARIZATION CHARACTERISTICS
LINEARLY POLARIZED
LASERS SYSTEMATIC
LIGHT OUTPUTS
EMITTING LASERS
CRYSTAL ORIENTATION

This publication has 2 references indexed in Scilit:

GaAlAs/GaAs MOCVD Growth for Surface Emitting Laser
Japanese Journal of Applied Physics, 1987
Room temperature pulsed oscillation of GaAlAs/GaAs surface emitting junction laser
IEEE Journal of Quantum Electronics, 1985