Minority-hole diffusion coefficient in an n-type heavily doped semiconductor region of silicon devices
- 16 December 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 68 (2) , 697-702
- https://doi.org/10.1002/pssa.2210680241
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Heavy doping effects in bipolar silicon transistors and p–n junction silicon solar cellsPhysica Status Solidi (a), 1981
- Diffusion Coefficients in Degenerate SemiconductorsPhysica Status Solidi (b), 1980
- Measurement of the minority-carrier transport parameters in heavily doped siliconIEEE Transactions on Electron Devices, 1980
- Heavy doping effects in p-n-p bipolar transistorsIEEE Transactions on Electron Devices, 1980
- Impurity band structure in degenerate semiconductors for both dense donors and acceptorsPhysica Status Solidi (a), 1979
- ErratumPhysica Status Solidi (b), 1979
- Heavily doped transparent-emitter regions in junction solar cells, diodes, and transistorsIEEE Transactions on Electron Devices, 1979
- Influence of band-tail parameters on electronic specific heat and transport coefficients in heavily doped semiconductorsPhysica Status Solidi (b), 1978
- Carrier densities and emitter efficiency in degenerate materials with position-dependent band structureSolid-State Electronics, 1978
- Electrical current in solids with position-dependent band structureSolid-State Electronics, 1978