Diffusion Coefficients in Degenerate Semiconductors
- 1 September 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 101 (1) , K27-K29
- https://doi.org/10.1002/pssb.2221010152
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Impurity band structure in degenerate semiconductors for both dense donors and acceptorsPhysica Status Solidi (a), 1979
- ErratumPhysica Status Solidi (b), 1979
- Law of the junction for degenerate material with position-dependent band gap and electron affinitySolid-State Electronics, 1979
- Diffusion coefficient in heavily doped siliconPhysica Status Solidi (a), 1979
- Influence of band-tail parameters on electronic specific heat and transport coefficients in heavily doped semiconductorsPhysica Status Solidi (b), 1978
- Two formulations of semiconductor transport equationsSolid-State Electronics, 1977
- Fermi energy and band-tail parameters in heavily doped semiconductorsJournal of Physics and Chemistry of Solids, 1975
- Electron mobility empirically related to the phosphorus concentration in siliconSolid-State Electronics, 1975
- Transport equations in heavy doped siliconIEEE Transactions on Electron Devices, 1973
- Carrier mobilities in silicon empirically related to doping and fieldProceedings of the IEEE, 1967