Diffusion coefficient in heavily doped silicon
- 16 January 1979
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 51 (1) , K89-K91
- https://doi.org/10.1002/pssa.2210510156
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Calculation of the Fermi level, minority carrier concentration, effective intrinsic concentration, and einstein relation in n- and p-type germanium and siliconPhysica Status Solidi (a), 1977
- Electron mobility empirically related to the phosphorus concentration in siliconSolid-State Electronics, 1975
- A self-consistent calculation of effective intrinsic concentration in heavily-doped siliconInternational Journal of Electronics, 1975
- Transport equations in heavy doped siliconIEEE Transactions on Electron Devices, 1973
- Carrier mobilities in silicon empirically related to doping and fieldProceedings of the IEEE, 1967
- Thomas-Fermi Approach to Impure Semiconductor Band StructurePhysical Review B, 1963