Creation of Highly-Ordered Si Nanocrystal Dots Suspended in SiO2 by Molecular Beam Epitaxy with Low Energy Oxygen Implantation
- 1 June 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (6S)
- https://doi.org/10.1143/jjap.36.4035
Abstract
Low energy oxygen implantation during Si molecular beam epitaxy (MBE) allows the formation of highly-oriented Si nanocrystal dots (NCDs) suspended in SiO2. Transmission electron microscopy reveals the unusual facet morphology of NCD while the spontaneous orientation of the crystal axis of NCD toward [100] is clearly observed. Well-developed {100} and {111} facets are characterized by nearly perfect Si/SiO2 interfaces. Compelling evidence is found for the epitaxial origin of NCD inherited from the parental two-dimensional Si slabs.Keywords
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