Light emitting nanocrystalline silicon prepared by dry processing: The effect of crystallite size
- 13 September 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (11) , 1474-1476
- https://doi.org/10.1063/1.109660
Abstract
A new technique for the preparation of light emitting nanocrystalline (nc) silicon by a combination of plasma chemical vapor deposition and post‐treatment consisting of oxidation and annealing in forming gas is reported. The advantage of this processing consists in the possibility of a control of the crystallite size and the fraction of nc‐Si in the film. A strong increase of the photoluminescence below 35 Å, as predicted by theory, is documented experimentally.Keywords
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