Properties of polycrystalline silicon prepared by chemical transport in hydrogen plasma at temperatures between 80 and 400 degrees C
- 30 January 1981
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 14 (3) , 295-308
- https://doi.org/10.1088/0022-3719/14/3/013
Abstract
Polycrystalline silicon films have been prepared using chemical transport in a low-pressure plasma in a temperature range 80-400 degrees C and at deposition rates up to approximately 3 AA s-1. Their Raman spectra show several features which are correlated with X-ray diffraction measurements and attributed to the presence of crystalline and amorphous-like components. Optical absorption, infrared spectra, preliminary data on dark conductivity and some further properties are reported.Keywords
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