Chromium diffusivity in boron-doped silicon: Reassessment of the activation energy from low temperature measurements
- 31 October 1989
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 4 (1-4) , 185-188
- https://doi.org/10.1016/0921-5107(89)90239-0
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Rapid thermal annealing: An efficient means to reveal chromium profiles in Si after diffusion and getteringApplied Physics Letters, 1989
- Chromium and chromium-boron pairs in siliconApplied Physics A, 1983
- Electronically controlled reactions of interstitial iron in siliconPhysica B+C, 1983
- Transition metals in siliconApplied Physics A, 1983
- Diffusion and solid solubility of chromium in siliconMaterials Research Bulletin, 1974