Field-effect transistor sensitive to dipolar molecules
- 1 October 1983
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (7) , 700-701
- https://doi.org/10.1063/1.94536
Abstract
A field-effect transistor with metal gate suspended above the gate insulator has been fabricated. Fluid samples can freely penetrate into the gap formed between the metal and the insulator. If the molecules carry an electrical dipole, they will alter the surface potential on these two materials giving rise to a change in the drain current of the transistor. Our preliminary results confirm this mechanism for dipolar molecules such as methanol and methylene chloride.Keywords
This publication has 2 references indexed in Scilit:
- The Suspended Mesh Ion Selective Field Effect TransistorJournal of the Electrochemical Society, 1982
- A hydrogen-sensitive Pd-gate MOS transistorJournal of Applied Physics, 1975