Residual damage to an atomically cleaned low-temperature-annealed Si(100) surface
- 15 September 1980
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (6) , 563-565
- https://doi.org/10.1063/1.91988
Abstract
A study of the residual damage to an atomically clean Si(100) surface obtained by low-energy ion sputtering followed by low-temperature annealing has been made. For the sputtering Ne, Ar, and Kr ions were used in the 1–4-keV energy range. The surface was annealed at a temperature of 720 °C. Residual damage to atomically clean Si surface was evaluated by excess-minority-carrier surface lifetime, and Rutherford backscattering measurements combined with channeling measurement. Residual damage to the Ar-sputtered and annealed surface was higher than that for the other gases.Keywords
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