Schottky diodes using poly(3-hexylthiophene)
- 15 August 1993
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (4) , 2957-2958
- https://doi.org/10.1063/1.355319
Abstract
Schottky barrierdiodes have been fabricated using poly(3‐hexylthiophene)(P3HT) as the semiconductor and indium as the metal. P3HT was doped with FeCl3 at room temperature to form a p‐type semiconductor. The Schottkyjunctions of In on FeCl3‐doped P3HT using pressure contact exhibit rectification ratios ranging from 104:1 to 106:1 at a bias of ±1 V.This publication has 8 references indexed in Scilit:
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