Energy level of neutral dangling-bond center (DO) in undoped a:Si:H determined by isothermal capacitance transient spectroscopy under high temperature
- 1 December 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 97-98, 723-726
- https://doi.org/10.1016/0022-3093(87)90170-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Energy levels of dangling-bond centres in a-Si:H studied by photocapadtance transient spectroscopyPhilosophical Magazine Letters, 1987
- A new approach to the study of solid-state reactionsPhilosophical Magazine A, 1986
- Gap states in phosphorus-doped amorphous silicon studied by isothermal capacitance transient spectroscopyPhilosophical Magazine Part B, 1985
- Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap statesPhysical Review B, 1982
- Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopyPhysical Review B, 1982