Atomic origins of surface core levels on Si(111)-(7×7) studied by site-dependent Ge substitution
- 15 February 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (7) , 3811-3814
- https://doi.org/10.1103/physrevb.45.3811
Abstract
Synchrotron-radiation photoemission has been used to examine the site-dependent Ge substitution for Si on Si(111)-(7×7) surfaces. The surface components of the Si 2p and Ge 3d core levels are analyzed as a function of Ge coverage and annealing temperature. The results show the lower-binding-energy component in the Si 2p core to be derived from adatom emission. Implications in regard to adatom–rest-atom charge transfer are discussed.Keywords
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