A study of alloy scattering in Ga1−xAlxAs

1 May 1980

journal article
research article
Published by AIP Publishing in Journal of Applied Physics

Vol. 51 (5) , 2669-2677
https://doi.org/10.1063/1.327926

Abstract

The temperature dependence of electron mobility of high‐purity LPE Ga_1−xAl_xAs layers (xE_B (which may include a contribution from space‐charge scattering) determined for these samples were found to lie in the range 0.36–0.51 eV, the average being 0.44 eV. The compensation ratio was found to be about 2, and independent of x.

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