Analysis of post-stress effects in passivated MOSFET's after hot-carrier stress.
- 31 October 1991
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 15 (1-4) , 437-440
- https://doi.org/10.1016/0167-9317(91)90259-g
Abstract
No abstract availableKeywords
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