Design analysis of thin-body silicide source/drain devices
- 13 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 1078621X,p. 21-22
- https://doi.org/10.1109/soic.2001.957965
Abstract
The use of complementary low-barrier silicides is investigated for reducing the series resistance of thin-body silicon-on-insulator (SOI) devices. Two different thin-body device types are simulated, one in which the source/drain regions are formed by the silicide without doping, and another in which the silicide source/drains are terminated by a doped extension region.Keywords
This publication has 3 references indexed in Scilit:
- A 25-nm-long Channel Metal-Gate p-Type Schottky Source/Drain Metal-Oxide-Semiconductor Field Effect Transistor on Separation-by-Implanted-Oxygen SubstrateJapanese Journal of Applied Physics, 2000
- Analysis of Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of Sub-50-nm n-type Devices with Metal GateJapanese Journal of Applied Physics, 1999
- Specific contact resistance of metal-semiconductor barriersSolid-State Electronics, 1971