Soft breakdown and hard breakdown in ultra-thin oxides
- 1 April 2001
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 41 (4) , 543-551
- https://doi.org/10.1016/s0026-2714(00)00253-5
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Explanation of soft and hard breakdown and its consequences for area scalingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Influence of soft breakdown on NMOSFET device characteristicsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Experimental evidence for voltage driven breakdown models in ultrathin gate oxidesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Field and temperature acceleration model for time-dependent dielectric breakdownIEEE Transactions on Electron Devices, 1999
- On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layersIEEE Transactions on Electron Devices, 1998
- New insights in the relation between electron trap generation and the statistical properties of oxide breakdownIEEE Transactions on Electron Devices, 1998
- Disturbed bonding states in SiO/sub 2/ thin-films and their impact on time-dependent dielectric breakdownPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1998
- Ultimate limit for defect generation in ultra-thin silicon dioxideApplied Physics Letters, 1997
- Definition of dielectric breakdown for ultra thin (<2 nm) gate oxidesSolid-State Electronics, 1997
- Soft breakdown of ultra-thin gate oxide layersIEEE Transactions on Electron Devices, 1996