Disturbed bonding states in SiO/sub 2/ thin-films and their impact on time-dependent dielectric breakdown
- 1 January 1998
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A temperature-independent field acceleration parameter /spl gamma/ and a field-independent activation energy /spl Delta/Ho can result when different types of disturbed bonding states are mixed during time-dependent dielectric breakdown (TDDB) testing of SiO/sub 2/ thin films. While /spl gamma/ for each defect type alone has the expected 1/T dependence and /spl Delta/Ho shows a linear decrease with electric field, a nearly temperature-independent /spl gamma/ and a field-independent /spl Delta/Ho can result when two or more disturbed bonding states are mixed. These observations suggest strongly that the oxygen vacancy is an important intrinsic defect for breakdown and that field, not current, is the cause of TDDB under low-field conditions.Keywords
This publication has 8 references indexed in Scilit:
- Impact of mixing of disturbed bonding states on time-dependent dielectric breakdown in SiO2 thin filmsApplied Physics Letters, 1997
- Low electric field breakdown of thin SiO/sub 2/ films under static and dynamic stressIEEE Transactions on Electron Devices, 1997
- Correlation between dielectric constant and chemical structure of sodium silicate glassesJournal of Applied Physics, 1996
- Wearout and Breakdown in Thin Silicon OxideJournal of the Electrochemical Society, 1995
- The silicon-silicon dioxide system: Its microstructure and imperfectionsReports on Progress in Physics, 1994
- Extrapolation of high-voltage stress measurements to low-voltage operation for thin silicon-oxide filmsIEEE Transactions on Reliability, 1991
- Trap creation in silicon dioxide produced by hot electronsJournal of Applied Physics, 1989
- Electronic Polarizabilities of Ions in CrystalsPhysical Review B, 1953