The Isolation Oxidation of Silicon: The Reaction-Controlled Case
- 1 August 1989
- journal article
- research article
- Published by Society for Industrial & Applied Mathematics (SIAM) in SIAM Journal on Applied Mathematics
- Vol. 49 (4) , 1064-1080
- https://doi.org/10.1137/0149064
Abstract
The two-dimensional isolation oxidation of silicon in the limit of reaction-controlled oxidation is considered (i.e., the nondimensional reaction coefficient is assumed small). Nitride rigidity is assumed nonnegligible, and general initial conditions are considered. Asymptotic methods are used to derive solutions under the nitride mask and close to the mask edge.Keywords
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