The Isolation Oxidation of Silicon
- 1 February 1989
- journal article
- Published by Society for Industrial & Applied Mathematics (SIAM) in SIAM Journal on Applied Mathematics
- Vol. 49 (1) , 264-280
- https://doi.org/10.1137/0149016
Abstract
A model for the isolation oxidation of silicon, an important process in the fabrication of many integrated circuits, is presented. The problem is two-dimensional with two moving boundaries. Oxidant diffusion is modelled as quasi-steady state and the oxide is assumed to be a Newtonian fluid. Asymptotic techniques are applied to the case of reaction controlled oxidation, which occurs for sufficiently thin oxides.Keywords
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