On the oxidation of silicon
- 1 January 1987
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 55 (2) , 117-129
- https://doi.org/10.1080/13642818708211199
Abstract
A survey is given of some features of the oxidation of silicon. In particular, the stress at the Si/SiO2, interface is discussed, and an explanation of the absence of large macroscopic stresses is suggested. The explanation given by Deal and Grove (1965) for the linear rate of growth of the oxide film at moderate thicknesses has to be abandoned for oxidation in O2, but perhaps not in water vapour. Transport numbers in anodization are discussed. Following observations by Rochet et al., we discuss the conditions for formation of amorphous and crystalline films.Keywords
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